HfAlO(x)/Al(2)O(3) Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlO(x)/Al(2)O(3) bilayer dielectrics is fabricated and characterized. The HfAlO(x)/Al(2)O(3) bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-termi...

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Detalles Bibliográficos
Autores principales: Zhang, Minghui, Lin, Fang, Wang, Wei, Wen, Feng, Chen, Genqiang, He, Shi, Wang, Yanfeng, Fan, Shuwei, Bu, Renan, Wang, Hongxing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778279/
https://www.ncbi.nlm.nih.gov/pubmed/35057163
http://dx.doi.org/10.3390/ma15020446
Descripción
Sumario:In this work, a hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with HfAlO(x)/Al(2)O(3) bilayer dielectrics is fabricated and characterized. The HfAlO(x)/Al(2)O(3) bilayer dielectrics are deposited by the atomic layer deposition (ALD) technique, which can protect the H-terminated diamond two-dimensional hole gas (2DHG) channel. The device demonstrates normally-on characteristics, whose threshold voltage (V(TH)) is 8.3 V. The maximum drain source current density (I(DSmax)), transconductance (G(m)), capacitance (C(OX)) and carrier density (ρ) are −6.3 mA/mm, 0.73 mS/mm, 0.22 μF/cm(2) and 1.53 × 10(13) cm(−2), respectively.

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