Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μ(sat)) of 7.9 cm(2)/V·s, an I(on)/I(off) ratio of 4.58 × 10(6), a subthreshold swing (SS) of 0.2...

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Detalles Bibliográficos
Autores principales: Ning, Honglong, Zeng, Xuan, Zhang, Hongke, Zhang, Xu, Yao, Rihui, Liu, Xianzhe, Luo, Dongxiang, Xu, Zhuohui, Ye, Qiannan, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779149/
https://www.ncbi.nlm.nih.gov/pubmed/35054555
http://dx.doi.org/10.3390/membranes12010029
Descripción
Sumario:Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μ(sat)) of 7.9 cm(2)/V·s, an I(on)/I(off) ratio of 4.58 × 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

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