Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μ(sat)) of 7.9 cm(2)/V·s, an I(on)/I(off) ratio of 4.58 × 10(6), a subthreshold swing (SS) of 0.2...

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Autores principales: Ning, Honglong, Zeng, Xuan, Zhang, Hongke, Zhang, Xu, Yao, Rihui, Liu, Xianzhe, Luo, Dongxiang, Xu, Zhuohui, Ye, Qiannan, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779149/
https://www.ncbi.nlm.nih.gov/pubmed/35054555
http://dx.doi.org/10.3390/membranes12010029
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author Ning, Honglong
Zeng, Xuan
Zhang, Hongke
Zhang, Xu
Yao, Rihui
Liu, Xianzhe
Luo, Dongxiang
Xu, Zhuohui
Ye, Qiannan
Peng, Junbiao
author_facet Ning, Honglong
Zeng, Xuan
Zhang, Hongke
Zhang, Xu
Yao, Rihui
Liu, Xianzhe
Luo, Dongxiang
Xu, Zhuohui
Ye, Qiannan
Peng, Junbiao
author_sort Ning, Honglong
collection PubMed
description Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μ(sat)) of 7.9 cm(2)/V·s, an I(on)/I(off) ratio of 4.58 × 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.
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spelling pubmed-87791492022-01-22 Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature Ning, Honglong Zeng, Xuan Zhang, Hongke Zhang, Xu Yao, Rihui Liu, Xianzhe Luo, Dongxiang Xu, Zhuohui Ye, Qiannan Peng, Junbiao Membranes (Basel) Communication Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μ(sat)) of 7.9 cm(2)/V·s, an I(on)/I(off) ratio of 4.58 × 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications. MDPI 2021-12-27 /pmc/articles/PMC8779149/ /pubmed/35054555 http://dx.doi.org/10.3390/membranes12010029 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Ning, Honglong
Zeng, Xuan
Zhang, Hongke
Zhang, Xu
Yao, Rihui
Liu, Xianzhe
Luo, Dongxiang
Xu, Zhuohui
Ye, Qiannan
Peng, Junbiao
Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
title Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
title_full Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
title_fullStr Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
title_full_unstemmed Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
title_short Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
title_sort transparent flexible igzo thin film transistors fabricated at room temperature
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779149/
https://www.ncbi.nlm.nih.gov/pubmed/35054555
http://dx.doi.org/10.3390/membranes12010029
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