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T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process
This paper presents a fast-switching Transmit/Receive (T/R) Single-Pole-Double-Throw (SPDT) Radio Frequency (RF) switch. Thorough analyses have been conducted to choose the optimum number of stacks, transistor sizes, gate and body voltages, to satisfy the required specifications. This switch applies...
Autores principales: | Rikan, Behnam S., Kim, David, Choi, Kyung-Duk, Hejazi, Arash, Yoo, Joon-Mo, Pu, YoungGun, Kim, Seokkee, Huh, Hyungki, Jung, Yeonjae, Lee, Kang-Yoon |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779679/ https://www.ncbi.nlm.nih.gov/pubmed/35062467 http://dx.doi.org/10.3390/s22020507 |
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