High Q Dielectric Titanium Tellurite Thick Films on Alumina Substrates for High Frequency Telecommunications

The vital role of high-quality-factor (Q) high-frequency (f) dielectric resonators in the growing microwave telecommunication, satellite broadcasting and intelligent transport systems has long motivated the search for new, small size, and lightweight integrated components and packages, prepared by low cost and sustainable processes. One approach is replacing the currently used bulk ceramic dielectrics by thick films of low-sintering-temperature dielectrics fabricated by affordable processes. Here we demonstrate the fabrication of high-Q TiTe(3)O(8) thick films directly on low loss Al(2)O(3) substrates by electrophoretic deposition using sacrificial carbon layer. Nineteen-micrometre-thick TiTe(3)O(8) films on Al(2)O(3) sintered at 700 °C are found to have a relative permittivity ε(r) of 32 and Q × f > 21,000 GHz. Being thus able to measure and provide for the first time the microwave dielectric properties of these films, our results suggest that TiTe(3)O(8) films on Al(2)O(3) substrates are suitable for microlayer microstrip array applications.