Influence of Etching Trench on [Formula: see text]  of Film Bulk Acoustic Resonator

As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient ([Formula: see text]), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the [Formula: see text] of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the [Formula: see text] of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The [Formula: see text] of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the [Formula: see text] of resonators to meet the requirements of different filter bandwidths.