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Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator
As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient ([Formula: see text]), has a great in...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780816/ https://www.ncbi.nlm.nih.gov/pubmed/35056267 http://dx.doi.org/10.3390/mi13010102 |
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author | Gao, Chao Zou, Yang Zhou, Jie Liu, Yan Liu, Wenjuan Cai, Yao Sun, Chengliang |
author_facet | Gao, Chao Zou, Yang Zhou, Jie Liu, Yan Liu, Wenjuan Cai, Yao Sun, Chengliang |
author_sort | Gao, Chao |
collection | PubMed |
description | As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient ([Formula: see text]), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the [Formula: see text] of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the [Formula: see text] of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The [Formula: see text] of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the [Formula: see text] of resonators to meet the requirements of different filter bandwidths. |
format | Online Article Text |
id | pubmed-8780816 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-87808162022-01-22 Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator Gao, Chao Zou, Yang Zhou, Jie Liu, Yan Liu, Wenjuan Cai, Yao Sun, Chengliang Micromachines (Basel) Article As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient ([Formula: see text]), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the [Formula: see text] of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the [Formula: see text] of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The [Formula: see text] of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the [Formula: see text] of resonators to meet the requirements of different filter bandwidths. MDPI 2022-01-08 /pmc/articles/PMC8780816/ /pubmed/35056267 http://dx.doi.org/10.3390/mi13010102 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Gao, Chao Zou, Yang Zhou, Jie Liu, Yan Liu, Wenjuan Cai, Yao Sun, Chengliang Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator |
title | Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator |
title_full | Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator |
title_fullStr | Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator |
title_full_unstemmed | Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator |
title_short | Influence of Etching Trench on [Formula: see text] of Film Bulk Acoustic Resonator |
title_sort | influence of etching trench on [formula: see text] of film bulk acoustic resonator |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780816/ https://www.ncbi.nlm.nih.gov/pubmed/35056267 http://dx.doi.org/10.3390/mi13010102 |
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