Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectiv...

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Detalles Bibliográficos
Autores principales: Feng, Tao, Chen, Gong, Han, Hainian, Qiao, Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781202/
https://www.ncbi.nlm.nih.gov/pubmed/35056180
http://dx.doi.org/10.3390/mi13010014

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781202/
https://www.ncbi.nlm.nih.gov/pubmed/35056180
http://dx.doi.org/10.3390/mi13010014

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