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Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change
The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectiv...
Autores principales: | Feng, Tao, Chen, Gong, Han, Hainian, Qiao, Jie |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781202/ https://www.ncbi.nlm.nih.gov/pubmed/35056180 http://dx.doi.org/10.3390/mi13010014 |
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