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Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene

The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging...

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Autores principales: Park, Honghwi, Lee, Junyeong, Lee, Chang-Ju, Kang, Jaewoon, Yun, Jiyeong, Noh, Hyowoong, Park, Minsu, Lee, Jonghyung, Park, Youngjin, Park, Jonghoo, Choi, Muhan, Lee, Sunghwan, Park, Hongsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781743/
https://www.ncbi.nlm.nih.gov/pubmed/35055225
http://dx.doi.org/10.3390/nano12020206
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author Park, Honghwi
Lee, Junyeong
Lee, Chang-Ju
Kang, Jaewoon
Yun, Jiyeong
Noh, Hyowoong
Park, Minsu
Lee, Jonghyung
Park, Youngjin
Park, Jonghoo
Choi, Muhan
Lee, Sunghwan
Park, Hongsik
author_facet Park, Honghwi
Lee, Junyeong
Lee, Chang-Ju
Kang, Jaewoon
Yun, Jiyeong
Noh, Hyowoong
Park, Minsu
Lee, Jonghyung
Park, Youngjin
Park, Jonghoo
Choi, Muhan
Lee, Sunghwan
Park, Hongsik
author_sort Park, Honghwi
collection PubMed
description The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.
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spelling pubmed-87817432022-01-22 Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene Park, Honghwi Lee, Junyeong Lee, Chang-Ju Kang, Jaewoon Yun, Jiyeong Noh, Hyowoong Park, Minsu Lee, Jonghyung Park, Youngjin Park, Jonghoo Choi, Muhan Lee, Sunghwan Park, Hongsik Nanomaterials (Basel) Article The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths. MDPI 2022-01-09 /pmc/articles/PMC8781743/ /pubmed/35055225 http://dx.doi.org/10.3390/nano12020206 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Park, Honghwi
Lee, Junyeong
Lee, Chang-Ju
Kang, Jaewoon
Yun, Jiyeong
Noh, Hyowoong
Park, Minsu
Lee, Jonghyung
Park, Youngjin
Park, Jonghoo
Choi, Muhan
Lee, Sunghwan
Park, Hongsik
Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
title Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
title_full Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
title_fullStr Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
title_full_unstemmed Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
title_short Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
title_sort simultaneous extraction of the grain size, single-crystalline grain sheet resistance, and grain boundary resistivity of polycrystalline monolayer graphene
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781743/
https://www.ncbi.nlm.nih.gov/pubmed/35055225
http://dx.doi.org/10.3390/nano12020206
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