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Theory of MBE Growth of Nanowires on Reflecting Substrates

Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re...

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Detalles Bibliográficos
Autor principal: Dubrovskii, Vladimir G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781942/
https://www.ncbi.nlm.nih.gov/pubmed/35055270
http://dx.doi.org/10.3390/nano12020253

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