Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer

Conductive-bridging random access memory (CBRAM) has garnered attention as a building block of non–von Neumann architectures because of scalability and parallel processing on the crossbar array. To integrate CBRAM into the back-end-of-line (BEOL) process, amorphous switching materials have been inve...

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Detalles Bibliográficos
Autores principales: Choi, Sang Hyun, Park, See-On, Seo, Seokho, Choi, Shinhyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8782456/
https://www.ncbi.nlm.nih.gov/pubmed/35061541
http://dx.doi.org/10.1126/sciadv.abj7866

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8782456/
https://www.ncbi.nlm.nih.gov/pubmed/35061541
http://dx.doi.org/10.1126/sciadv.abj7866

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