Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics

The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc oxide) memristors were investigated for synapse application. The use of the oxide bi-layer memristors, in particular,...

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Detalles Bibliográficos
Autores principales: Choi, Hyun-Woong, Song, Ki-Woo, Kim, Seong-Hyun, Nguyen, Kim Thanh, Eadi, Sunil Babu, Kwon, Hyuk-Min, Lee, Hi-Deok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8786833/
https://www.ncbi.nlm.nih.gov/pubmed/35075173
http://dx.doi.org/10.1038/s41598-022-05150-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8786833/
https://www.ncbi.nlm.nih.gov/pubmed/35075173
http://dx.doi.org/10.1038/s41598-022-05150-w

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