Cargando…
An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties
For organic semiconductors, the development of electron-deficient building blocks has lagged far behind that of the electron-rich ones. Moreover, it remains a significant challenge to design organic molecules with efficient charge transport and strong solid-state emission simultaneously. Herein, we...
Autores principales: | , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8790796/ https://www.ncbi.nlm.nih.gov/pubmed/35211264 http://dx.doi.org/10.1039/d1sc06807e |
_version_ | 1784640094952488960 |
---|---|
author | Sun, Xianglang Liao, Ming-Yun Yu, Xinyu Wu, Ying-Sheng Zhong, Cheng Chueh, Chu-Chen Li, Zhen Li, Zhong'an |
author_facet | Sun, Xianglang Liao, Ming-Yun Yu, Xinyu Wu, Ying-Sheng Zhong, Cheng Chueh, Chu-Chen Li, Zhen Li, Zhong'an |
author_sort | Sun, Xianglang |
collection | PubMed |
description | For organic semiconductors, the development of electron-deficient building blocks has lagged far behind that of the electron-rich ones. Moreover, it remains a significant challenge to design organic molecules with efficient charge transport and strong solid-state emission simultaneously. Herein, we describe a facile synthetic route toward a new π-acceptor imide building block, namely 2,3-fluoranthene imide, based on which four regioregular small molecules (F1–F4) are synthesized by tuning the imide orientations and the central linkage bridges. All molecules exhibit attractive aggregation-induced emission (AIE) characteristics with strong far-red emission in the powder state, and F3 shows the highest photoluminescence quantum yield of 5.9%. F1 and F3 with a thiophene bridge present an obvious p-type characteristic, while for F3 with an outward imide orientation, the maximum hole mobility from a solution-processed field-effect transistor (FET) device reaches 0.026 cm(2) V(−1) s(−1), being ∼10(4) times higher than the value of F1 with an inward imide orientation. By using a fluorinated thiophene bridge, the resulting F2 and F4 can be turned into n-type semiconductors, showing an electron mobility of ∼1.43 × 10(−4) and ∼3.34 × 10(−5) cm(2) V(−1) s(−1), respectively. Our work not only demonstrates that asymmetric 2,3-fluoranthene imide is a promising building block for constructing organic materials with high carrier mobility and strong solid-state emission, but also highlights the importance of regioregular structures in the materials' properties. |
format | Online Article Text |
id | pubmed-8790796 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-87907962022-02-23 An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties Sun, Xianglang Liao, Ming-Yun Yu, Xinyu Wu, Ying-Sheng Zhong, Cheng Chueh, Chu-Chen Li, Zhen Li, Zhong'an Chem Sci Chemistry For organic semiconductors, the development of electron-deficient building blocks has lagged far behind that of the electron-rich ones. Moreover, it remains a significant challenge to design organic molecules with efficient charge transport and strong solid-state emission simultaneously. Herein, we describe a facile synthetic route toward a new π-acceptor imide building block, namely 2,3-fluoranthene imide, based on which four regioregular small molecules (F1–F4) are synthesized by tuning the imide orientations and the central linkage bridges. All molecules exhibit attractive aggregation-induced emission (AIE) characteristics with strong far-red emission in the powder state, and F3 shows the highest photoluminescence quantum yield of 5.9%. F1 and F3 with a thiophene bridge present an obvious p-type characteristic, while for F3 with an outward imide orientation, the maximum hole mobility from a solution-processed field-effect transistor (FET) device reaches 0.026 cm(2) V(−1) s(−1), being ∼10(4) times higher than the value of F1 with an inward imide orientation. By using a fluorinated thiophene bridge, the resulting F2 and F4 can be turned into n-type semiconductors, showing an electron mobility of ∼1.43 × 10(−4) and ∼3.34 × 10(−5) cm(2) V(−1) s(−1), respectively. Our work not only demonstrates that asymmetric 2,3-fluoranthene imide is a promising building block for constructing organic materials with high carrier mobility and strong solid-state emission, but also highlights the importance of regioregular structures in the materials' properties. The Royal Society of Chemistry 2022-01-06 /pmc/articles/PMC8790796/ /pubmed/35211264 http://dx.doi.org/10.1039/d1sc06807e Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Sun, Xianglang Liao, Ming-Yun Yu, Xinyu Wu, Ying-Sheng Zhong, Cheng Chueh, Chu-Chen Li, Zhen Li, Zhong'an An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
title | An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
title_full | An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
title_fullStr | An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
title_full_unstemmed | An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
title_short | An asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
title_sort | asymmetric 2,3-fluoranthene imide building block for regioregular semiconductors with aggregation-induced emission properties |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8790796/ https://www.ncbi.nlm.nih.gov/pubmed/35211264 http://dx.doi.org/10.1039/d1sc06807e |
work_keys_str_mv | AT sunxianglang anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT liaomingyun anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT yuxinyu anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT wuyingsheng anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT zhongcheng anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT chuehchuchen anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT lizhen anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT lizhongan anasymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT sunxianglang asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT liaomingyun asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT yuxinyu asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT wuyingsheng asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT zhongcheng asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT chuehchuchen asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT lizhen asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties AT lizhongan asymmetric23fluorantheneimidebuildingblockforregioregularsemiconductorswithaggregationinducedemissionproperties |