Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si

[Image: see text] Sb-based semiconductors are critical p-channel materials for III–V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to g...

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Detalles Bibliográficos
Autores principales: Zhu, Zhongyunshen, Jönsson, Adam, Liu, Yen-Po, Svensson, Johannes, Timm, Rainer, Wernersson, Lars-Erik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8793030/
https://www.ncbi.nlm.nih.gov/pubmed/35098137
http://dx.doi.org/10.1021/acsaelm.1c01134

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8793030/
https://www.ncbi.nlm.nih.gov/pubmed/35098137
http://dx.doi.org/10.1021/acsaelm.1c01134

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