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Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
[Image: see text] Sb-based semiconductors are critical p-channel materials for III–V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to g...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8793030/ https://www.ncbi.nlm.nih.gov/pubmed/35098137 http://dx.doi.org/10.1021/acsaelm.1c01134 |