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A Novel RFET Sensor for Label-Free Biomolecule Detection

In the current scenario, COVID-19 has created a havoc negative impact on the lives of the people, which have triggered the research interest on the design and development of sensitive, low cost and power-efficient sensors for detecting a wide variety of biomolecules. Here, a novel hetero dielectric...

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Detalles Bibliográficos
Autores principales: Biswas, Arpita, Rajan, Chithraja, Samajdar, Dip Prakash
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Netherlands 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8802748/
http://dx.doi.org/10.1007/s12633-022-01683-x
Descripción
Sumario:In the current scenario, COVID-19 has created a havoc negative impact on the lives of the people, which have triggered the research interest on the design and development of sensitive, low cost and power-efficient sensors for detecting a wide variety of biomolecules. Here, a novel hetero dielectric (HD) hetero material (HM) Bio-RFET based sensor is proposed which works as n or p MOSFET and n or p TFET and hence, is capable to sense the biomolecules through label-free dielectric modulation technique. Without labelling expenses, this biosensor detects a number of biomolecules present in human body as and when kept in a nano cavity. The dielectric polarization within the nanocavity due to the presence of foreign biomolecules under the influence of an electric field causes a variation in drain current. In this paper (SiO(2) + TiO(2)) and AlGaAs/Si based HD-HM-RFET is explored for biosensing applications and mole fraction optimization of AlGaAs is done to obtain better results for four FETs. Work function of 4.5 eV is used in over drain and source electrodes, while metal work function of 4.7 eV  is used for gate electrode. Finally, we found that the proposed device possesses better sensing capability for varying dielectric constant (K = 20 to 80) and charge (−5 × 10(11) to 1 × 10(13) C/cm2) as compared to a (SiO(2) + HfO(2))-HM-RFET and Si based (SiO(2) + TiO(2))-RFET. Further, it is observed that n-(SiO(2) + TiO(2))-HM-TFET is the best among all FETs and has highest I(d)-V(gs) sensitivity = 5.09 × 10(13), I(ON)/I(OFF) = 1.23 × 10(9), lowest SS = 20.3 mV/dec and V(th) = 1.48 V.