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Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium
Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid these issues has however been limited for applications such as ph...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8803860/ https://www.ncbi.nlm.nih.gov/pubmed/35102214 http://dx.doi.org/10.1038/s41598-022-05721-x |
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author | Yoshida, Akinobu Gamo, Hironori Motohisa, Junichi Tomioka, Katsuhiro |
author_facet | Yoshida, Akinobu Gamo, Hironori Motohisa, Junichi Tomioka, Katsuhiro |
author_sort | Yoshida, Akinobu |
collection | PubMed |
description | Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid these issues has however been limited for applications such as photonics, electronics, and photovoltaics. Here, we studied nanometer-scale direct integration of InGaAs nanowires (NWs) on Ge in terms of heterogenous integration and creation of functional materials with an as yet unexplored heterostructure. We revealed that changing the initial Ge into a (111)B-polar surce anabled vertical InGaAs NWs to be integrated for all In compositions examined. Moreover, the growth naturally formed a tunnel junction across the InGaAs/Ge interface that showed a rectification property with a huge current density of several kAcm(−2) and negative differential resistance with a peak-to-valley current ratio of 2.8. The described approach expands the range of material combinations for high-performance transistors, tandem solar cells, and three-dimensional integrations. |
format | Online Article Text |
id | pubmed-8803860 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-88038602022-02-01 Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium Yoshida, Akinobu Gamo, Hironori Motohisa, Junichi Tomioka, Katsuhiro Sci Rep Article Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid these issues has however been limited for applications such as photonics, electronics, and photovoltaics. Here, we studied nanometer-scale direct integration of InGaAs nanowires (NWs) on Ge in terms of heterogenous integration and creation of functional materials with an as yet unexplored heterostructure. We revealed that changing the initial Ge into a (111)B-polar surce anabled vertical InGaAs NWs to be integrated for all In compositions examined. Moreover, the growth naturally formed a tunnel junction across the InGaAs/Ge interface that showed a rectification property with a huge current density of several kAcm(−2) and negative differential resistance with a peak-to-valley current ratio of 2.8. The described approach expands the range of material combinations for high-performance transistors, tandem solar cells, and three-dimensional integrations. Nature Publishing Group UK 2022-01-31 /pmc/articles/PMC8803860/ /pubmed/35102214 http://dx.doi.org/10.1038/s41598-022-05721-x Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Yoshida, Akinobu Gamo, Hironori Motohisa, Junichi Tomioka, Katsuhiro Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium |
title | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium |
title_full | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium |
title_fullStr | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium |
title_full_unstemmed | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium |
title_short | Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium |
title_sort | creation of unexplored tunnel junction by heterogeneous integration of ingaas nanowires on germanium |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8803860/ https://www.ncbi.nlm.nih.gov/pubmed/35102214 http://dx.doi.org/10.1038/s41598-022-05721-x |
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