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Manipulation of current rectification in van der Waals ferroionic CuInP(2)S(6)

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals fe...

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Detalles Bibliográficos
Autores principales: Jiang, Xingan, Wang, Xueyun, Wang, Xiaolei, Zhang, Xiangping, Niu, Ruirui, Deng, Jianming, Xu, Sheng, Lun, Yingzhuo, Liu, Yanyu, Xia, Tianlong, Lu, Jianming, Hong, Jiawang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8803863/
https://www.ncbi.nlm.nih.gov/pubmed/35102192
http://dx.doi.org/10.1038/s41467-022-28235-6
Descripción
Sumario:Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP(2)S(6) as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu(+) ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.