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Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8807615/ https://www.ncbi.nlm.nih.gov/pubmed/35105938 http://dx.doi.org/10.1038/s41598-022-06291-8 |
| _version_ | 1784643718695878656 |
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| author | Antoun, G. Tillocher, T. Lefaucheux, P. Faguet, J. Maekawa, K. Dussart, R. |
| author_facet | Antoun, G. Tillocher, T. Lefaucheux, P. Faguet, J. Maekawa, K. Dussart, R. |
| author_sort | Antoun, G. |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-8807615 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2022 |
| publisher | Nature Publishing Group UK |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-88076152022-02-03 Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption Antoun, G. Tillocher, T. Lefaucheux, P. Faguet, J. Maekawa, K. Dussart, R. Sci Rep Author Correction Nature Publishing Group UK 2022-02-01 /pmc/articles/PMC8807615/ /pubmed/35105938 http://dx.doi.org/10.1038/s41598-022-06291-8 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
| spellingShingle | Author Correction Antoun, G. Tillocher, T. Lefaucheux, P. Faguet, J. Maekawa, K. Dussart, R. Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption |
| title | Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption |
| title_full | Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption |
| title_fullStr | Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption |
| title_full_unstemmed | Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption |
| title_short | Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption |
| title_sort | author correction: mechanism understanding in cryo atomic layer etching of sio(2) based upon c(4)f(8) physisorption |
| topic | Author Correction |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8807615/ https://www.ncbi.nlm.nih.gov/pubmed/35105938 http://dx.doi.org/10.1038/s41598-022-06291-8 |
| work_keys_str_mv | AT antoung authorcorrectionmechanismunderstandingincryoatomiclayeretchingofsio2baseduponc4f8physisorption AT tillochert authorcorrectionmechanismunderstandingincryoatomiclayeretchingofsio2baseduponc4f8physisorption AT lefaucheuxp authorcorrectionmechanismunderstandingincryoatomiclayeretchingofsio2baseduponc4f8physisorption AT faguetj authorcorrectionmechanismunderstandingincryoatomiclayeretchingofsio2baseduponc4f8physisorption AT maekawak authorcorrectionmechanismunderstandingincryoatomiclayeretchingofsio2baseduponc4f8physisorption AT dussartr authorcorrectionmechanismunderstandingincryoatomiclayeretchingofsio2baseduponc4f8physisorption |