Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

Detalles Bibliográficos
Autores principales: Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Author Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8807615/
https://www.ncbi.nlm.nih.gov/pubmed/35105938
http://dx.doi.org/10.1038/s41598-022-06291-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8807615/
https://www.ncbi.nlm.nih.gov/pubmed/35105938
http://dx.doi.org/10.1038/s41598-022-06291-8

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