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Author Correction: Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
Autores principales: | Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8807615/ https://www.ncbi.nlm.nih.gov/pubmed/35105938 http://dx.doi.org/10.1038/s41598-022-06291-8 |
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