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Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etch...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8822459/ https://www.ncbi.nlm.nih.gov/pubmed/35186651 http://dx.doi.org/10.3762/bjnano.13.12 |
| Sumario: | Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in the literature. Initial oxidation processes were identified based on high-resolution STM images. |
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