Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etch...

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Autores principales: Tanaka, Hiroya, Ohno, Shinya, Miki, Kazushi, Tanaka, Masatoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2022
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8822459/
https://www.ncbi.nlm.nih.gov/pubmed/35186651
http://dx.doi.org/10.3762/bjnano.13.12
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author Tanaka, Hiroya
Ohno, Shinya
Miki, Kazushi
Tanaka, Masatoshi
author_facet Tanaka, Hiroya
Ohno, Shinya
Miki, Kazushi
Tanaka, Masatoshi
author_sort Tanaka, Hiroya
collection PubMed
description Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in the literature. Initial oxidation processes were identified based on high-resolution STM images.
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spelling pubmed-88224592022-02-17 Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy Tanaka, Hiroya Ohno, Shinya Miki, Kazushi Tanaka, Masatoshi Beilstein J Nanotechnol Full Research Paper Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etching occur. A precise temperature–pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in the literature. Initial oxidation processes were identified based on high-resolution STM images. Beilstein-Institut 2022-02-03 /pmc/articles/PMC8822459/ /pubmed/35186651 http://dx.doi.org/10.3762/bjnano.13.12 Text en Copyright © 2022, Tanaka et al. https://creativecommons.org/licenses/by/4.0/This is an open access article licensed under the terms of the Beilstein-Institut Open Access License Agreement (https://www.beilstein-journals.org/bjnano/terms/terms), which is identical to the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0 (https://creativecommons.org/licenses/by/4.0/) ). The reuse of material under this license requires that the author(s), source and license are credited. Third-party material in this article could be subject to other licenses (typically indicated in the credit line), and in this case, users are required to obtain permission from the license holder to reuse the material.
spellingShingle Full Research Paper
Tanaka, Hiroya
Ohno, Shinya
Miki, Kazushi
Tanaka, Masatoshi
Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
title Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
title_full Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
title_fullStr Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
title_full_unstemmed Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
title_short Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
title_sort thermal oxidation process on si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8822459/
https://www.ncbi.nlm.nih.gov/pubmed/35186651
http://dx.doi.org/10.3762/bjnano.13.12
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AT mikikazushi thermaloxidationprocessonsi11332investigatedusinghightemperaturescanningtunnelingmicroscopy
AT tanakamasatoshi thermaloxidationprocessonsi11332investigatedusinghightemperaturescanningtunnelingmicroscopy

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