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Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes – oxidation, etching, and transition modes – in the third of which both oxidation and etch...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8822459/ https://www.ncbi.nlm.nih.gov/pubmed/35186651 http://dx.doi.org/10.3762/bjnano.13.12 |