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Compton coincidence in silicon photon-counting CT detectors

PURPOSE: Compton interactions amount to a significant fraction of the registered counts in a silicon detector. In a Compton interaction, only a part of the photon energy is deposited and a single incident photon can result in multiple counts unless tungsten shielding is used. Deep silicon has proved...

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Detalles Bibliográficos
Autores principales: Sundberg, Christel, Danielsson, Mats, Persson, Mats
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Society of Photo-Optical Instrumentation Engineers 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8823694/
https://www.ncbi.nlm.nih.gov/pubmed/35155716
http://dx.doi.org/10.1117/1.JMI.9.1.013501
Descripción
Sumario:PURPOSE: Compton interactions amount to a significant fraction of the registered counts in a silicon detector. In a Compton interaction, only a part of the photon energy is deposited and a single incident photon can result in multiple counts unless tungsten shielding is used. Deep silicon has proved to be a competitive material for photon-counting CT detectors, but to improve the performance further, one possibility is to use coincidence techniques to identify Compton-scattered photons and reconstruct their incident energies. APPROACH: In a detector with no tungsten shielding, incident photons can interact through a series of interactions. Based on the position and energy of each interaction, probability-based methods can be used to estimate the incident photon energy. Here, we present a maximum likelihood estimation framework along with an alternative method to estimate the incident photon energy and position in a silicon detector. RESULTS: Assuming one incident photon per time frame, we show that the incident photon energy can be estimated with a mean error of [Formula: see text] and an RMS error of [Formula: see text] for a realistic case in which we assume a detector with limited energy and spatial resolution. The interaction position was estimated with a mean error of [Formula: see text] in [Formula: see text] direction and [Formula: see text] in [Formula: see text] direction. Corresponding RMS errors of [Formula: see text] and [Formula: see text] were achieved in [Formula: see text] and [Formula: see text] , respectively. CONCLUSIONS: The presented results show the potential of using probability-based methods to improve the performance of silicon detectors for CT.