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Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects
Two-dimensional (2D) topological insulators, a type of the extraordinary quantum electronic states, have attracted considerable interest due to their unique electronic properties and promising potential applications. Recently, the successful fabrication of 2D Te monolayers (i.e. tellurene) in experi...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8826415/ https://www.ncbi.nlm.nih.gov/pubmed/35136163 http://dx.doi.org/10.1038/s41598-022-06242-3 |
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author | Bao, Hairui Zhao, Bao Zhang, Jiayong Xue, Yang Huan, Hao Gao, Guanyi Yang, Zhongqin |
author_facet | Bao, Hairui Zhao, Bao Zhang, Jiayong Xue, Yang Huan, Hao Gao, Guanyi Yang, Zhongqin |
author_sort | Bao, Hairui |
collection | PubMed |
description | Two-dimensional (2D) topological insulators, a type of the extraordinary quantum electronic states, have attracted considerable interest due to their unique electronic properties and promising potential applications. Recently, the successful fabrication of 2D Te monolayers (i.e. tellurene) in experiments (Zhu et al., Phys Rev Lett 119:106101, 2017) has promoted researches on the group-VI monolayer materials. With first-principles calculations and tight-binding (TB) method, we investigate the structures and electronic states of 2D polonium (poloniumene), in which Po is a congener of Te. The poloniumene is found to have the tendency of forming a three-atomic-layer 1 T-MoS(2)-like structure (called trigonal poloniumene), namely, the central-layer Po atoms behave metal-like, while the two-outer-layer Po atoms are semiconductor-like. This unique multivalent behavior of the Po atoms is conducive to the structural stability of the monolayer, which is found to be an intrinsic quantum spin Hall insulator with a large band gap. The nontrivial topology originates from the [Formula: see text] band inversion, which can be understood based on a built TB model. The poloniumene with different congener elements doped is also explored. Our results provide a thorough understanding of structures and electronic states of 2D polonium-related materials. |
format | Online Article Text |
id | pubmed-8826415 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-88264152022-02-10 Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects Bao, Hairui Zhao, Bao Zhang, Jiayong Xue, Yang Huan, Hao Gao, Guanyi Yang, Zhongqin Sci Rep Article Two-dimensional (2D) topological insulators, a type of the extraordinary quantum electronic states, have attracted considerable interest due to their unique electronic properties and promising potential applications. Recently, the successful fabrication of 2D Te monolayers (i.e. tellurene) in experiments (Zhu et al., Phys Rev Lett 119:106101, 2017) has promoted researches on the group-VI monolayer materials. With first-principles calculations and tight-binding (TB) method, we investigate the structures and electronic states of 2D polonium (poloniumene), in which Po is a congener of Te. The poloniumene is found to have the tendency of forming a three-atomic-layer 1 T-MoS(2)-like structure (called trigonal poloniumene), namely, the central-layer Po atoms behave metal-like, while the two-outer-layer Po atoms are semiconductor-like. This unique multivalent behavior of the Po atoms is conducive to the structural stability of the monolayer, which is found to be an intrinsic quantum spin Hall insulator with a large band gap. The nontrivial topology originates from the [Formula: see text] band inversion, which can be understood based on a built TB model. The poloniumene with different congener elements doped is also explored. Our results provide a thorough understanding of structures and electronic states of 2D polonium-related materials. Nature Publishing Group UK 2022-02-08 /pmc/articles/PMC8826415/ /pubmed/35136163 http://dx.doi.org/10.1038/s41598-022-06242-3 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Bao, Hairui Zhao, Bao Zhang, Jiayong Xue, Yang Huan, Hao Gao, Guanyi Yang, Zhongqin Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects |
title | Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects |
title_full | Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects |
title_fullStr | Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects |
title_full_unstemmed | Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects |
title_short | Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects |
title_sort | trigonal multivalent polonium monolayers with intrinsic quantum spin hall effects |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8826415/ https://www.ncbi.nlm.nih.gov/pubmed/35136163 http://dx.doi.org/10.1038/s41598-022-06242-3 |
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