Tuning of Thermoelectric Properties of MoSe(2) Thin Films Under Helium Ion Irradiation

Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal conductivity. However, their thermoelectric parameters such as Seebeck coefficient, electrical conductivity, and thermal conductivity are interdependent, which is a drawback. Therefore, it is necessary to find a way to adjust one of these parameters without affecting the other parameters. In this study, we investigated the effect of helium ion irradiation on MoSe(2) thin films with the objective of controlling the Seebeck coefficient and electrical conductivity. At the optimal irradiation dose of 10(15) cm(−2), we observed multiple enhancements of the power factor resulting from an increase in the electrical conductivity, with slight suppression of the Seebeck coefficient. Raman spectroscopy, X-ray diffraction, and transmission electron microscopy analyses revealed that irradiation-induced selenium vacancies played an important role in changing the thermoelectric properties of MoSe(2) thin films. These results suggest that helium ion irradiation is a promising method to significantly improve the thermoelectric properties of two-dimensional transition metal dichalcogenides. GRAPHICAL ABSTRACT: [Image: see text] Effect of He(+) irradiation on thermoelectric properties of MoSe(2) thin films.