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Nanoscale-Resolved Surface-to-Bulk Electron Transport in CsPbBr(3) Perovskite

[Image: see text] Describing the nanoscale charge carrier transport at surfaces and interfaces is fundamental for designing high-performance optoelectronic devices. To achieve this, we employ time- and angle-resolved photoelectron spectroscopy with ultraviolet pump and extreme ultraviolet probe puls...

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Detalles Bibliográficos
Autores principales: Polishchuk, Serhii, Puppin, Michele, Crepaldi, Alberto, Gatti, Gianmarco, Dirin, Dmitry N., Nazarenko, Olga, Colonna, Nicola, Marzari, Nicola, Kovalenko, Maksym V., Grioni, Marco, Chergui, Majed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8832496/
https://www.ncbi.nlm.nih.gov/pubmed/35044784
http://dx.doi.org/10.1021/acs.nanolett.1c03941
Descripción
Sumario:[Image: see text] Describing the nanoscale charge carrier transport at surfaces and interfaces is fundamental for designing high-performance optoelectronic devices. To achieve this, we employ time- and angle-resolved photoelectron spectroscopy with ultraviolet pump and extreme ultraviolet probe pulses. The resulting high surface sensitivity reveals an ultrafast carrier population decay associated with surface-to-bulk transport, which was tracked with a sub-nanometer spatial resolution normal to the surface, and on a femtosecond time scale, in the case of the inorganic CsPbBr(3) lead halide perovskite. The decay time exhibits a pronounced carrier density dependence, which is attributed via modeling to enhanced diffusive transport and concurrent recombination. The transport is found to approach an ordinary diffusive regime, limited by electron–hole scattering, at the highest excitation fluences. This approach constitutes an important milestone in our capability to probe hot-carrier transport at solid interfaces with sub-nanometer resolution in a theoretically and experimentally challenging, yet technologically relevant, high-carrier-density regime.