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Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher opti...

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Detalles Bibliográficos
Autores principales: Chang, Chiao, Cheng, Hung-Hsiang, Sevison, Gary A., Hendrickson, Joshua R., Li, Zairui, Agha, Imad, Mathews, Jay, Soref, Richard A., Sun, Greg
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8838467/
https://www.ncbi.nlm.nih.gov/pubmed/35160939
http://dx.doi.org/10.3390/ma15030989
Descripción
Sumario:We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.