Effect of Process Temperature on Density and Electrical Characteristics of Hf(0.5)Zr(0.5)O(2) Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Hf(x)Zr(1−x)O(2) (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (P(r)) and fatigue endurance of these films. To overcome these limit...

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Detalles Bibliográficos
Autores principales: Kim, Hak-Gyeong, Hong, Da-Hee, Yoo, Jae-Hoon, Lee, Hee-Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839501/
https://www.ncbi.nlm.nih.gov/pubmed/35159892
http://dx.doi.org/10.3390/nano12030548

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839501/
https://www.ncbi.nlm.nih.gov/pubmed/35159892
http://dx.doi.org/10.3390/nano12030548

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