Cargando…

Surface Plasmon Enhancement of an InGaN Quantum Well Using Nanoparticles Made of Different Metals and Their Combinations

Surface plasmon (SP) enhancement of photoluminescence (PL) from a green-emitting InGaN/GaN quantum well (QW) using nanoparticles (NPs) made of different metals and their combinations was investigated. The NPs were formed by annealing the metal films in N(2) followed by rapid cooling. Four-fold enhan...

Descripción completa

Detalles Bibliográficos
Autores principales:	Saleem, Muhammad Farooq, Peng, Yi, Li, Liuyan, Zhou, Bangdi, Yang, Jia, Lu, Haixia, Li, Guoxin, Huang, Lixiang, Chen, Jie, Wei, Wenwang, Yang, Yanlian, Wang, Yukun, Sun, Wenhong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8839922/ https://www.ncbi.nlm.nih.gov/pubmed/35159715 http://dx.doi.org/10.3390/nano12030370

Ejemplares similares

Resonant Raman Scattering in Boron-Implanted GaN
por: Peng, Yi, et al.
Publicado: (2022)

Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement
por: Fadil, Ahmed, et al.
Publicado: (2014)

Indium segregation measured in InGaN quantum well layer
por: Deng, Zhen, et al.
Publicado: (2014)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Intersubband Transition in GaN/InGaN Multiple Quantum Wells
por: Chen, G., et al.
Publicado: (2015)

Effects of Surface Plasmon Coupling on the Color Conversion of an InGaN/GaN Quantum-Well Structure into Colloidal Quantum Dots Inserted into a Nearby Porous Structure
por: Yang, Shaobo, et al.
Publicado: (2023)

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
por: Tan, Chee-Keong, et al.
Publicado: (2016)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances
por: Saleem, Muhammad Farooq, et al.
Publicado: (2021)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells
por: Wang, Yachen, et al.
Publicado: (2022)

Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Santiago, Svette Reina Merden, et al.
Publicado: (2018)

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
por: Liu, Wei, et al.
Publicado: (2023)

Correction: Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Merden Santiago, Svette Reina, et al.
Publicado: (2018)

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
por: Yang, Haojun, et al.
Publicado: (2017)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
por: Zhu, Yadan, et al.
Publicado: (2017)

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells
por: Marona, Lucja, et al.
Publicado: (2020)

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
por: Hajdel, Mateusz, et al.
Publicado: (2021)

Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells
por: Yamaguchi, Yudai, et al.
Publicado: (2022)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
por: Li, Changfu, et al.
Publicado: (2017)

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
por: Vasileiadis, I. G., et al.
Publicado: (2021)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
por: Lottigier, Pierre, et al.
Publicado: (2023)

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
por: Li, Xuan, et al.
Publicado: (2021)

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures
por: Xing, Yuchen, et al.
Publicado: (2017)

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
por: Xing, Yao, et al.
Publicado: (2019)

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
por: Liu, Xingchen, et al.
Publicado: (2020)

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
por: Griffiths, James T., et al.
Publicado: (2015)

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells
por: Sun, Haoran, et al.
Publicado: (2023)

Investigation on the corrosive effect of NH(3) during InGaN/GaN multi-quantum well growth in light emitting diodes
por: Yang, J., et al.
Publicado: (2017)

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
por: Duque, Carlos M, et al.
Publicado: (2012)

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
por: Zhao, Wan-Ru, et al.
Publicado: (2015)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
por: Mohamed, Ahmed, et al.
Publicado: (2019)

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
por: Ben, Yuhao, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_fi1kube6osnsu7nmmd2n81oqra