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Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We int...

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Autores principales: Chen, Jian, Zhu, Bao-Hua, Yang, Shan, Yue, Wei, Lee, Dong-Min, Kim, Eun-Seong, Kim, Nam-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840602/
https://www.ncbi.nlm.nih.gov/pubmed/35159692
http://dx.doi.org/10.3390/nano12030347
_version_ 1784650660741906432
author Chen, Jian
Zhu, Bao-Hua
Yang, Shan
Yue, Wei
Lee, Dong-Min
Kim, Eun-Seong
Kim, Nam-Young
author_facet Chen, Jian
Zhu, Bao-Hua
Yang, Shan
Yue, Wei
Lee, Dong-Min
Kim, Eun-Seong
Kim, Nam-Young
author_sort Chen, Jian
collection PubMed
description In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We introduced air-bridge structures into the outer metal wire to improve the capacitance per unit volume while utilizing a miniaturized chip with dimensions 1538 μm × 800 μm (0.029 λ(0) × 0.015 λ(0)) for the BPF. The pattern was designed and optimized by simulating different dimensional parameters, and the group delay and current density are presented. The equivalent circuit was modeled to analysis various parasitic effect. Additionally, we described the GaAs-based micro-nano scale fabrication process to elucidate the proposed IPD technology and the physical structure of the BPF. Measurements were conducted with a center frequency of 1.53 GHz (insertion loss of 0.53 dB) and a 3-dB fractional bandwidth (FBW) of 70.59%. The transmission zero was located at 4.16 GHz with restraint of 35.86 dB. Owing to the benefits from its miniaturized chip size and high performance, the proposed GaAs-based IPD BPF was verified as an excellent device for various S-band applications, such as satellite communication, keyless vehicle locks, wireless headphones, and radar.
format Online
Article
Text
id pubmed-8840602
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-88406022022-02-13 Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology Chen, Jian Zhu, Bao-Hua Yang, Shan Yue, Wei Lee, Dong-Min Kim, Eun-Seong Kim, Nam-Young Nanomaterials (Basel) Article In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We introduced air-bridge structures into the outer metal wire to improve the capacitance per unit volume while utilizing a miniaturized chip with dimensions 1538 μm × 800 μm (0.029 λ(0) × 0.015 λ(0)) for the BPF. The pattern was designed and optimized by simulating different dimensional parameters, and the group delay and current density are presented. The equivalent circuit was modeled to analysis various parasitic effect. Additionally, we described the GaAs-based micro-nano scale fabrication process to elucidate the proposed IPD technology and the physical structure of the BPF. Measurements were conducted with a center frequency of 1.53 GHz (insertion loss of 0.53 dB) and a 3-dB fractional bandwidth (FBW) of 70.59%. The transmission zero was located at 4.16 GHz with restraint of 35.86 dB. Owing to the benefits from its miniaturized chip size and high performance, the proposed GaAs-based IPD BPF was verified as an excellent device for various S-band applications, such as satellite communication, keyless vehicle locks, wireless headphones, and radar. MDPI 2022-01-21 /pmc/articles/PMC8840602/ /pubmed/35159692 http://dx.doi.org/10.3390/nano12030347 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Jian
Zhu, Bao-Hua
Yang, Shan
Yue, Wei
Lee, Dong-Min
Kim, Eun-Seong
Kim, Nam-Young
Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology
title Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology
title_full Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology
title_fullStr Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology
title_full_unstemmed Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology
title_short Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology
title_sort design and micro-nano fabrication of a gaas-based on-chip miniaturized bandpass filter with intertwined inductors and circinate capacitor using integrated passive device technology
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8840602/
https://www.ncbi.nlm.nih.gov/pubmed/35159692
http://dx.doi.org/10.3390/nano12030347
work_keys_str_mv AT chenjian designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology
AT zhubaohua designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology
AT yangshan designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology
AT yuewei designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology
AT leedongmin designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology
AT kimeunseong designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology
AT kimnamyoung designandmicronanofabricationofagaasbasedonchipminiaturizedbandpassfilterwithintertwinedinductorsandcircinatecapacitorusingintegratedpassivedevicetechnology