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Low-Temperature and UV Irradiation Effect on Transformation of Zirconia -MPS nBBs-Based Gels into Hybrid Transparent Dielectric Thin Films

Bottom-up approaches in solutions enable the low-temperature preparation of hybrid thin films suitable for printable transparent and flexible electronic devices. We report the obtainment of new transparent PMMA/ZrO(2) nanostructured -building blocks (nBBs) hybrid thin films (61–75 nm) by a modified...

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Detalles Bibliográficos
Autores principales: Muşat, Viorica, Herbei, Elena Emanuela, Anghel, Elena Maria, Jank, Michael P. M., Oertel, Susanne, Timpu, Daniel, Frangu, Laurenţiu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8870923/
https://www.ncbi.nlm.nih.gov/pubmed/35200450
http://dx.doi.org/10.3390/gels8020068
Descripción
Sumario:Bottom-up approaches in solutions enable the low-temperature preparation of hybrid thin films suitable for printable transparent and flexible electronic devices. We report the obtainment of new transparent PMMA/ZrO(2) nanostructured -building blocks (nBBs) hybrid thin films (61–75 nm) by a modified sol-gel method using zirconium ethoxide, Zr(OEt)(4), and 3-methacryloxypropyl trimethoxysilane (MPS) as a coupling agent and methylmethacrylate monomer (MMA). The effect of low-temperature and UV irradiation on the nBBs gel films is discussed. The thermal behaviors of the hybrid sols and as-deposed gel films were investigated by modulated thermogravimetric (mTG) and differential scanning calorimetry (DSC) analysis. The chemical structure of the resulted films was elucidated by X-ray photoelectron (XPS), infrared (IR) and Raman spectroscopies. Their morphology and crystalline structure were observed by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and grazing incidence X-ray diffraction. The cured films show zirconia nanocrystallites of 2–4 nm in the hybrid matrix and different self-assembled structures for 160 °C or UV treatment; excellent dielectric behavior, with dielectric constant values within 6.7–17.9, depending on the Zr(OEt)(4):MMA molar ratio, were obtained.