A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic bidirectional switch, two 2DEG-based current-limiting resistors (R(1A)/R(1C), in parallel connection between the gate electrodes and the neighboring ohmic-contact electrodes (anode/cathode)), and a 2DEG-based proportional amplification resistor (R(2), in parallel connection between two gate electrodes). It is demonstrated that the proposed B-TVS-D possesses a symmetrical triggering voltage (V(trig)) and a high secondary breakdown current (I(s), over 8 A, corresponding to 12 kV human body model failure voltage) in different directional electrostatic discharge (ESD) events. The proposed diode can effectively enhance the electrostatic discharge robustness for the GaN-based power system. It is also verified that R(1A)/R(1C) and R(2) have an important impact on V(trig) of the proposed B-TVS-D. Both the decrease in R(2) and increase in R(1A)/R(1C) can lead to the decrease of V(trig). In addition, the proposed B-TVS-D can be fabricated on the conventional p-GaN HEMT platform, making the ESD design of the GaN-based power system more convenient.