Investigation of SiO(2) Etch Characteristics by C(6)F(6)/Ar/O(2) Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

The etching properties of C(6)F(6)/Ar/O(2) in both an inductively coupled plasma (ICP) system and a capacitively coupled plasma (CCP) system were evaluated to investigate the effects of high C/F ratio of perfluorocarbon (PFC) gas on the etch characteristics of SiO(2). When the SiO(2) masked with ACL...

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Detalles Bibliográficos
Autores principales: Sung, Dain, Wen, Long, Tak, Hyunwoo, Lee, Hyejoo, Kim, Dongwoo, Yeom, Geunyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876613/
https://www.ncbi.nlm.nih.gov/pubmed/35207841
http://dx.doi.org/10.3390/ma15041300

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876613/
https://www.ncbi.nlm.nih.gov/pubmed/35207841
http://dx.doi.org/10.3390/ma15041300

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