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A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowe...

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Detalles Bibliográficos
Autores principales: Shen, Zhihua, Wang, Xiao, Li, Qiaoning, Ge, Bin, Jiang, Linlin, Tian, Jinshou, Wu, Shengli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876930/
https://www.ncbi.nlm.nih.gov/pubmed/35208410
http://dx.doi.org/10.3390/mi13020286
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author Shen, Zhihua
Wang, Xiao
Li, Qiaoning
Ge, Bin
Jiang, Linlin
Tian, Jinshou
Wu, Shengli
author_facet Shen, Zhihua
Wang, Xiao
Li, Qiaoning
Ge, Bin
Jiang, Linlin
Tian, Jinshou
Wu, Shengli
author_sort Shen, Zhihua
collection PubMed
description A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrier-lowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors.
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spelling pubmed-88769302022-02-26 A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect Shen, Zhihua Wang, Xiao Li, Qiaoning Ge, Bin Jiang, Linlin Tian, Jinshou Wu, Shengli Micromachines (Basel) Article A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrier-lowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors. MDPI 2022-02-10 /pmc/articles/PMC8876930/ /pubmed/35208410 http://dx.doi.org/10.3390/mi13020286 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Shen, Zhihua
Wang, Xiao
Li, Qiaoning
Ge, Bin
Jiang, Linlin
Tian, Jinshou
Wu, Shengli
A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
title A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
title_full A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
title_fullStr A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
title_full_unstemmed A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
title_short A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
title_sort high-sensitivity vacuum diode temperature sensor based on barrier-lowering effect
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876930/
https://www.ncbi.nlm.nih.gov/pubmed/35208410
http://dx.doi.org/10.3390/mi13020286
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