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A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect
A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowe...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876930/ https://www.ncbi.nlm.nih.gov/pubmed/35208410 http://dx.doi.org/10.3390/mi13020286 |
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author | Shen, Zhihua Wang, Xiao Li, Qiaoning Ge, Bin Jiang, Linlin Tian, Jinshou Wu, Shengli |
author_facet | Shen, Zhihua Wang, Xiao Li, Qiaoning Ge, Bin Jiang, Linlin Tian, Jinshou Wu, Shengli |
author_sort | Shen, Zhihua |
collection | PubMed |
description | A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrier-lowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors. |
format | Online Article Text |
id | pubmed-8876930 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-88769302022-02-26 A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect Shen, Zhihua Wang, Xiao Li, Qiaoning Ge, Bin Jiang, Linlin Tian, Jinshou Wu, Shengli Micromachines (Basel) Article A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrier-lowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors. MDPI 2022-02-10 /pmc/articles/PMC8876930/ /pubmed/35208410 http://dx.doi.org/10.3390/mi13020286 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Shen, Zhihua Wang, Xiao Li, Qiaoning Ge, Bin Jiang, Linlin Tian, Jinshou Wu, Shengli A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect |
title | A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect |
title_full | A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect |
title_fullStr | A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect |
title_full_unstemmed | A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect |
title_short | A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect |
title_sort | high-sensitivity vacuum diode temperature sensor based on barrier-lowering effect |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8876930/ https://www.ncbi.nlm.nih.gov/pubmed/35208410 http://dx.doi.org/10.3390/mi13020286 |
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