Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots

Permanent electric dipole is a key property for effective control of semiconductor quantum-dot-based sources of quantum light. For theoretical prediction of that, complex geometry-dependent quantum simulations are necessary. Here, we use [Formula: see text] simulations of exciton transition in InGaAs quantum dots to derive a simple geometry-dependent analytical model of dipole. Our model, discussed here, enables reasonably good estimation of the electric dipole, caused in quantum dot by the elastic strain, including an externally induced one. Due to its apparent simplicity, not necessitating elaborate and time-consuming simulations, it might after experimental verification serve as a preferred choice for experimentalists enabling them to make quick estimates of built-in and induced electric dipole in quantum dots.