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Towards Transient Electronics through Heat Triggered Shattering of Off-the-Shelf Electronic Chips

With most of the critical data being stored in silicon (Si) based electronic devices, there is a need to develop such devices with a transient nature. Here, we have focused on developing a programmable and controllable heat triggered shattering transience mechanism for any off-the-shelf (OTS) Si mic...

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Detalles Bibliográficos
Autores principales: Pandey, Shashank, Mastrangelo, Carlos
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8877697/
https://www.ncbi.nlm.nih.gov/pubmed/35208366
http://dx.doi.org/10.3390/mi13020242
Descripción
Sumario:With most of the critical data being stored in silicon (Si) based electronic devices, there is a need to develop such devices with a transient nature. Here, we have focused on developing a programmable and controllable heat triggered shattering transience mechanism for any off-the-shelf (OTS) Si microchip as a means to develop transient electronics which can then be safely and rapidly disabled on trigger when desired. This transience mechanism is based on irreversible and spontaneous propagation of cracks that are patterned on the back of the OTS chip in the form of grooves and then filled with thermally expandable (TE) material. Two types of TE materials were used in this study, commercially available microsphere particles and a developed elastomeric material. These materials expand >100 times their original volume on the application of heat which applies wedging stress of the groove boundaries and induces crack propagation resulting in the complete shattering of the OTS Si chip into tiny silicon pieces. Transience was controlled by temperature and can be triggered at ~160–190 °C. We also demonstrated the programmability of critical parameters such as transience time (0.35–12 s) and transience efficiency (5–60%) without the knowledge of material properties by modeling the swelling behavior using linear viscoelastic models.