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Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links
The forthcoming sixth generation (6G) communication network is envisioned to provide ultra-fast data transmission and ubiquitous wireless connectivity. The terahertz (THz) spectrum, with higher frequency and wider bandwidth, offers great potential for 6G wireless technologies. However, the THz links...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879315/ https://www.ncbi.nlm.nih.gov/pubmed/35208409 http://dx.doi.org/10.3390/mi13020285 |
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author | Yang, Fengyuan Pitchappa, Prakash Wang, Nan |
author_facet | Yang, Fengyuan Pitchappa, Prakash Wang, Nan |
author_sort | Yang, Fengyuan |
collection | PubMed |
description | The forthcoming sixth generation (6G) communication network is envisioned to provide ultra-fast data transmission and ubiquitous wireless connectivity. The terahertz (THz) spectrum, with higher frequency and wider bandwidth, offers great potential for 6G wireless technologies. However, the THz links suffers from high loss and line-of-sight connectivity. To overcome these challenges, a cost-effective method to dynamically optimize the transmission path using reconfigurable intelligent surfaces (RISs) is widely proposed. RIS is constructed by embedding active elements into passive metasurfaces, which is an artificially designed periodic structure. However, the active elements (e.g., PIN diodes) used for 5G RIS are impractical for 6G RIS due to the cutoff frequency limitation and higher loss at THz frequencies. As such, various tuning elements have been explored to fill this THz gap between radio waves and infrared light. The focus of this review is on THz RISs with the potential to assist 6G communication functionalities including pixel-level amplitude modulation and dynamic beam manipulation. By reviewing a wide range of tuning mechanisms, including electronic approaches (complementary metal-oxide-semiconductor (CMOS) transistors, Schottky diodes, high electron mobility transistors (HEMTs), and graphene), optical approaches (photoactive semiconductor materials), phase-change materials (vanadium dioxide, chalcogenides, and liquid crystals), as well as microelectromechanical systems (MEMS), this review summarizes recent developments in THz RISs in support of 6G communication links and discusses future research directions in this field. |
format | Online Article Text |
id | pubmed-8879315 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-88793152022-02-26 Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links Yang, Fengyuan Pitchappa, Prakash Wang, Nan Micromachines (Basel) Review The forthcoming sixth generation (6G) communication network is envisioned to provide ultra-fast data transmission and ubiquitous wireless connectivity. The terahertz (THz) spectrum, with higher frequency and wider bandwidth, offers great potential for 6G wireless technologies. However, the THz links suffers from high loss and line-of-sight connectivity. To overcome these challenges, a cost-effective method to dynamically optimize the transmission path using reconfigurable intelligent surfaces (RISs) is widely proposed. RIS is constructed by embedding active elements into passive metasurfaces, which is an artificially designed periodic structure. However, the active elements (e.g., PIN diodes) used for 5G RIS are impractical for 6G RIS due to the cutoff frequency limitation and higher loss at THz frequencies. As such, various tuning elements have been explored to fill this THz gap between radio waves and infrared light. The focus of this review is on THz RISs with the potential to assist 6G communication functionalities including pixel-level amplitude modulation and dynamic beam manipulation. By reviewing a wide range of tuning mechanisms, including electronic approaches (complementary metal-oxide-semiconductor (CMOS) transistors, Schottky diodes, high electron mobility transistors (HEMTs), and graphene), optical approaches (photoactive semiconductor materials), phase-change materials (vanadium dioxide, chalcogenides, and liquid crystals), as well as microelectromechanical systems (MEMS), this review summarizes recent developments in THz RISs in support of 6G communication links and discusses future research directions in this field. MDPI 2022-02-10 /pmc/articles/PMC8879315/ /pubmed/35208409 http://dx.doi.org/10.3390/mi13020285 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Yang, Fengyuan Pitchappa, Prakash Wang, Nan Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links |
title | Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links |
title_full | Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links |
title_fullStr | Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links |
title_full_unstemmed | Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links |
title_short | Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links |
title_sort | terahertz reconfigurable intelligent surfaces (riss) for 6g communication links |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8879315/ https://www.ncbi.nlm.nih.gov/pubmed/35208409 http://dx.doi.org/10.3390/mi13020285 |
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