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A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function

In this paper, the design, fabrication and measurement of a thermoelectric MEMS microwave power sensor with the terminal load inline self-detection function is proposed. The structure of the sensor mainly includes a coplanar waveguide, a thermopile, two terminal load resistors and two calibration re...

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Detalles Bibliográficos
Autores principales: Liu, Jiaqi, Hong, Yang, Wang, Jutao, Cai, Chunhua, Zhang, Zhiqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880168/
https://www.ncbi.nlm.nih.gov/pubmed/35208363
http://dx.doi.org/10.3390/mi13020239
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author Liu, Jiaqi
Hong, Yang
Wang, Jutao
Cai, Chunhua
Zhang, Zhiqiang
author_facet Liu, Jiaqi
Hong, Yang
Wang, Jutao
Cai, Chunhua
Zhang, Zhiqiang
author_sort Liu, Jiaqi
collection PubMed
description In this paper, the design, fabrication and measurement of a thermoelectric MEMS microwave power sensor with the terminal load inline self-detection function is proposed. The structure of the sensor mainly includes a coplanar waveguide, a thermopile, two terminal load resistors and two calibration resistors. In order to realize the inline self-detection function, the load and calibration resistors are designed to form a voltage divider circuit. The fabrication of this sensor is compatible with the GaAs MMIC technology. The on-chip performance is tested by using a microwave experimental platform. The measured reflection loss is less than −10 dB at 0.1–10 GHz. When the bias voltage is not applied, the sensitivity of the sensor is 47.39 μV/mW@5 GHz and 32.58 μV/mW@10 GHz, respectively, and when the bias voltage is applied, the sensitivity is 47.50 μV/mW@5 GHz and 32.73 μV/mW@10 GHz, respectively. The difference between the two cases is less than 0.5% at the same frequency, which indicates that whether or not to apply the bias voltage has little effect on the sensitivity. In addition, when the calibration resistance is increased from 50 to 100 Ω, the current flowing through the load resistance is decreased under the same bias voltage. Therefore, the DC power consumed on the load resistance will be significantly reduced. This makes the measured and theoretical results show better agreement, thus verifying the validity of the design.
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spelling pubmed-88801682022-02-26 A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function Liu, Jiaqi Hong, Yang Wang, Jutao Cai, Chunhua Zhang, Zhiqiang Micromachines (Basel) Article In this paper, the design, fabrication and measurement of a thermoelectric MEMS microwave power sensor with the terminal load inline self-detection function is proposed. The structure of the sensor mainly includes a coplanar waveguide, a thermopile, two terminal load resistors and two calibration resistors. In order to realize the inline self-detection function, the load and calibration resistors are designed to form a voltage divider circuit. The fabrication of this sensor is compatible with the GaAs MMIC technology. The on-chip performance is tested by using a microwave experimental platform. The measured reflection loss is less than −10 dB at 0.1–10 GHz. When the bias voltage is not applied, the sensitivity of the sensor is 47.39 μV/mW@5 GHz and 32.58 μV/mW@10 GHz, respectively, and when the bias voltage is applied, the sensitivity is 47.50 μV/mW@5 GHz and 32.73 μV/mW@10 GHz, respectively. The difference between the two cases is less than 0.5% at the same frequency, which indicates that whether or not to apply the bias voltage has little effect on the sensitivity. In addition, when the calibration resistance is increased from 50 to 100 Ω, the current flowing through the load resistance is decreased under the same bias voltage. Therefore, the DC power consumed on the load resistance will be significantly reduced. This makes the measured and theoretical results show better agreement, thus verifying the validity of the design. MDPI 2022-01-31 /pmc/articles/PMC8880168/ /pubmed/35208363 http://dx.doi.org/10.3390/mi13020239 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Liu, Jiaqi
Hong, Yang
Wang, Jutao
Cai, Chunhua
Zhang, Zhiqiang
A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function
title A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function
title_full A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function
title_fullStr A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function
title_full_unstemmed A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function
title_short A Thermoelectric MEMS Microwave Power Sensor with Inline Self-Detection Function
title_sort thermoelectric mems microwave power sensor with inline self-detection function
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8880168/
https://www.ncbi.nlm.nih.gov/pubmed/35208363
http://dx.doi.org/10.3390/mi13020239
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