Short Photoluminescence Lifetimes Linked to Crystallite Dimensions, Connectivity, and Perovskite Crystal Phases

[Image: see text] Time-correlated single photon counting has been conducted to gain further insights into the short photoluminescence lifetimes (nanosecond) of lead iodide perovskite (MAPbI(3)) thin films (∼100 nm). We analyze three different morphologies, compact layer, isolated island, and connected large grain films, from 14 to 300 K using a laser excitation power of 370 nJ/cm(2). Lifetime fittings from the Generalized Berberan-Santos decay model range from 0.5 to 6.5 ns, pointing to quasi-direct bandgap emission despite the three different sample strains. The high energy band emission for the isolated-island morphology shows fast recombination rate centers up to 4.8 ns(–1), compared to the less than 2 ns(–1) for the other two morphologies, similar to that expected in a good quality single crystal of MAPbI(3). Low-temperature measurements on samples reflect a huge oscillator strength in this material where the free exciton recombination dominates, explaining the fast lifetimes, the low thermal excitation, and the thermal escape obtained.