Improved spin–orbit torque induced magnetization switching efficiency by helium ion irradiation

Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switch...

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Detalles Bibliográficos
Autores principales: An, Suhyeok, Baek, Eunchong, Kim, Jin-A, Lee, Ki-Seung, You, Chun-Yeol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8891290/
https://www.ncbi.nlm.nih.gov/pubmed/35236883
http://dx.doi.org/10.1038/s41598-022-06960-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8891290/
https://www.ncbi.nlm.nih.gov/pubmed/35236883
http://dx.doi.org/10.1038/s41598-022-06960-8

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