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Improved spin–orbit torque induced magnetization switching efficiency by helium ion irradiation
Increasing the efficiency of spin–orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switch...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8891290/ https://www.ncbi.nlm.nih.gov/pubmed/35236883 http://dx.doi.org/10.1038/s41598-022-06960-8 |