Maximizing the performance of n-type Mg(3)Bi(2) based materials for room-temperature power generation and thermoelectric cooling

Although the thermoelectric effect was discovered around 200 years ago, the main application in practice is thermoelectric cooling using the traditional Bi(2)Te(3). The related studies of new and efficient room-temperature thermoelectric materials and modules have, however, not come to fruition yet. In this work, the electronic properties of n-type Mg(3.2)Bi(1.5)Sb(0.5) material are maximized via delicate microstructural design with the aim of eliminating the thermal grain boundary resistance, eventually leading to a high zT above 1 over a broad temperature range from 323 K to 423 K. Importantly, we further demonstrated a great breakthrough in the non-Bi(2)Te(3) thermoelectric module, coupled with the high-performance p-type α-MgAgSb, for room-temperature power generation and thermoelectric cooling. A high conversion efficiency of ~2.8% at the temperature difference of 95 K and a maximum temperature difference of 56.5 K are experimentally achieved. If the interfacial contact resistance is further reduced, our non-Bi(2)Te(3) module may rival the long-standing champion commercial Bi(2)Te(3) system. Overall, this work represents a substantial step towards the real thermoelectric application using non-Bi(2)Te(3) materials and devices.