Performance Enhancement and Comparison of Graphene Field Effect Transistor Devices Coated with HMDS Layer

Graphene-based devices show good transfer characteristics, which depend upon the surface morphology of the material and substrate. During fabrication of the device, the substrate morphology is disturbed inappropriately by the surface contamination. In the present study, monolayer Graphene Field Effect Transistor (GFET) has been driven with hydrophobic Hexamethyl Disilazane (HMDS) layer. The HMDS layer is dehydrated before and after the exfoliated monolayer graphene, and the electrical characteristics were measured. The transfer curve of the HMDS coated graphene device demonstrates excellent FET characteristics and prevents contamination from the atmosphere under ambient conditions. Fabrication of GFET device on the hydrophobic substrate enhances the effective ambipolar behavior. It is beginning with an excellent platform and user-friendly device for biosensing applications.