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Distorted zinc coordination polyhedra in bis­(1-eth­oxy-2-{[(2-meth­oxy­eth­yl)imino]­meth­yl}propan-1-olato)zinc, a possible CVD precursor for zinc oxide thin films

A new metal–organic precursor for the chemical vapor deposition of zinc oxide thin films, [Zn(C(9)H(16)NO(3))(2)], has been synthesized and characterized by (1)H and (13)C NMR spectroscopy, single-crystal X-ray diffraction and thermogravimetric analysis. The asymmetric unit of the title compound con...

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Detalles Bibliográficos
Autores principales: Johnson, Keneshia O., Brown, Antionette, Farris, Gabriella, Starks, Alexabria, Butcher, Ray J., Matthews, Jason S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8900511/
https://www.ncbi.nlm.nih.gov/pubmed/35371543
http://dx.doi.org/10.1107/S2056989022001475
Descripción
Sumario:A new metal–organic precursor for the chemical vapor deposition of zinc oxide thin films, [Zn(C(9)H(16)NO(3))(2)], has been synthesized and characterized by (1)H and (13)C NMR spectroscopy, single-crystal X-ray diffraction and thermogravimetric analysis. The asymmetric unit of the title compound consists of two mol­ecules (Z′ = 2), with different zinc coordination polyhedra. In one mol­ecule, the metal atom is in a distorted trigonal–bipyramidal ZnN(2)O(3) environment (τ(5) = 0.192) with a long bond to an ether O donor atom [Zn—O = 2.727 (6) Å]. In the other, the Zn atom is in a distorted ZnN(2)O(4) octa­hedral environment with long bonds to the ether O donors of both ligands [Zn—O = 2.514 (4) and 2.661 (4) Å; O—Zn—O = 82.46 (14)°]. The crystal structure features weak C—H⋯·O inter­actions.