Type-II Band Alignment and Tunable Optical Absorption in MoSSe/InS van der Waals Heterostructure

In this work, we study the electronic structure, the effective mass, and the optical properties of the MoSSe/InS van der Waals heterostructures (vdWHs) by first-principles calculations. The results indicate that the MoSSe/InS vdWH is an indirect band gap semiconductor and has type-Ⅱ band alignment i...

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Detalles Bibliográficos
Autores principales: Yuan, X. B., Guo, Y. H., Wang, J. L., Hu, G. C., Ren, J. F., Zhao, X. W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8902150/
https://www.ncbi.nlm.nih.gov/pubmed/35273953
http://dx.doi.org/10.3389/fchem.2022.861838

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8902150/
https://www.ncbi.nlm.nih.gov/pubmed/35273953
http://dx.doi.org/10.3389/fchem.2022.861838

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