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Type-II Band Alignment and Tunable Optical Absorption in MoSSe/InS van der Waals Heterostructure
In this work, we study the electronic structure, the effective mass, and the optical properties of the MoSSe/InS van der Waals heterostructures (vdWHs) by first-principles calculations. The results indicate that the MoSSe/InS vdWH is an indirect band gap semiconductor and has type-Ⅱ band alignment i...
Autores principales: | Yuan, X. B., Guo, Y. H., Wang, J. L., Hu, G. C., Ren, J. F., Zhao, X. W. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Frontiers Media S.A.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8902150/ https://www.ncbi.nlm.nih.gov/pubmed/35273953 http://dx.doi.org/10.3389/fchem.2022.861838 |
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