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Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture
The photocathodes are essential in photoelectrochemical systems for harvesting solar energy as green fuels. However, the light-absorbing p-type semiconductor in them usually suffers from carrier recombination issues. An effective strategy to address it is fabricating the p-n heterojunction to create...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Frontiers Media S.A.
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8902498/ https://www.ncbi.nlm.nih.gov/pubmed/35273948 http://dx.doi.org/10.3389/fchem.2022.832342 |
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author | Cao, Yufeng Qiao, Huajian Zou, Yalong An, Na Zhou, Yang Liu, Deyu Kuang, Yongbo |
author_facet | Cao, Yufeng Qiao, Huajian Zou, Yalong An, Na Zhou, Yang Liu, Deyu Kuang, Yongbo |
author_sort | Cao, Yufeng |
collection | PubMed |
description | The photocathodes are essential in photoelectrochemical systems for harvesting solar energy as green fuels. However, the light-absorbing p-type semiconductor in them usually suffers from carrier recombination issues. An effective strategy to address it is fabricating the p-n heterojunction to create an interfacial electric field. However, plenty of deposition process of the n-type layer for this purpose requires either sophisticated instruments or subsequent treatments, which may damage the vulnerable p-type structure. Herein, we report a mild approach for a ready-to-use n-type layer with full functionality. Structural analyses proved the successful coating of a uniform titania layer (up to 40 nm) over Cu(2)O without damaging its structure. Owing to the high Ti(3+) content, the layer possesses excellent charge transport ability and requires no additional annealing. The heterojunction effectively facilitates the carrier separation and positively shifts the photocurrent onset potential for 0.2 V. The Mott–Schottky plot and the impedance study reveal an enhanced carrier collection with reduced charge transfer resistances. Such a nano-heterojunction can be further loaded with the hydrogen evolution catalyst, which almost doubles the photocurrent with an extended lifetime than that of the pristine Cu(2)O nanoarray. This approach puts forward a potentially scalable and efficient choice for fabricating photoelectrochemical devices. |
format | Online Article Text |
id | pubmed-8902498 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Frontiers Media S.A. |
record_format | MEDLINE/PubMed |
spelling | pubmed-89024982022-03-09 Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture Cao, Yufeng Qiao, Huajian Zou, Yalong An, Na Zhou, Yang Liu, Deyu Kuang, Yongbo Front Chem Chemistry The photocathodes are essential in photoelectrochemical systems for harvesting solar energy as green fuels. However, the light-absorbing p-type semiconductor in them usually suffers from carrier recombination issues. An effective strategy to address it is fabricating the p-n heterojunction to create an interfacial electric field. However, plenty of deposition process of the n-type layer for this purpose requires either sophisticated instruments or subsequent treatments, which may damage the vulnerable p-type structure. Herein, we report a mild approach for a ready-to-use n-type layer with full functionality. Structural analyses proved the successful coating of a uniform titania layer (up to 40 nm) over Cu(2)O without damaging its structure. Owing to the high Ti(3+) content, the layer possesses excellent charge transport ability and requires no additional annealing. The heterojunction effectively facilitates the carrier separation and positively shifts the photocurrent onset potential for 0.2 V. The Mott–Schottky plot and the impedance study reveal an enhanced carrier collection with reduced charge transfer resistances. Such a nano-heterojunction can be further loaded with the hydrogen evolution catalyst, which almost doubles the photocurrent with an extended lifetime than that of the pristine Cu(2)O nanoarray. This approach puts forward a potentially scalable and efficient choice for fabricating photoelectrochemical devices. Frontiers Media S.A. 2022-02-22 /pmc/articles/PMC8902498/ /pubmed/35273948 http://dx.doi.org/10.3389/fchem.2022.832342 Text en Copyright © 2022 Cao, Qiao, Zou, An, Zhou, Liu and Kuang. https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms. |
spellingShingle | Chemistry Cao, Yufeng Qiao, Huajian Zou, Yalong An, Na Zhou, Yang Liu, Deyu Kuang, Yongbo Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture |
title | Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture |
title_full | Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture |
title_fullStr | Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture |
title_full_unstemmed | Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture |
title_short | Room Temperature Electrodeposition of Ready-to-Use TiO(x) for Uniform p-n Heterojunction Over Nanoarchitecture |
title_sort | room temperature electrodeposition of ready-to-use tio(x) for uniform p-n heterojunction over nanoarchitecture |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8902498/ https://www.ncbi.nlm.nih.gov/pubmed/35273948 http://dx.doi.org/10.3389/fchem.2022.832342 |
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